Semiconductor surface emitting laser having enhanced optical confinement
文献类型：专利
| 作者 | CHOQUETTE, KENT DENNIS; FREUND, ROBERT S.; HONG, MINGHWEI |
| 专利号 | EP0562769A2 |
| 著作权人 | AT&T CORP. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor surface emitting laser having enhanced optical confinement |
| 英文摘要 | The present applicants have discovered that one can make a surface emitting laser with enhanced optical confinement and improved heat sinking characteristics by etching away portions of the growth layers peripheral to the intended laser cavity and regrowing peripheral regions of material (24A,24B) having a lower index of refraction than the active region. Using low damage etching and either in situ regrowth or hydrogen plasma cleaning followed by regrowth, a surface emitting laser having enhanced optical isolation and heat sinking characteristics can be made. |
| 公开日期 | 1993-09-29 |
| 申请日期 | 1993-03-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43645]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T CORP. |
| 推荐引用方式 GB/T 7714 | CHOQUETTE, KENT DENNIS,FREUND, ROBERT S.,HONG, MINGHWEI. Semiconductor surface emitting laser having enhanced optical confinement. EP0562769A2. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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