Manufacture of semiconductor laser having periodic structure
文献类型：专利
| 作者 | NOGUCHI ETSUO; SUZUKI YOSHIO; NAGAI HARUO |
| 专利号 | JP1984046083A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser having periodic structure |
| 英文摘要 | PURPOSE:To make the rugged faces of the semiconductor layer of the titled device to generate no deformation when the semiconductor layer is formed by a method wherein stripe type semiconductor layers of a large number are formed on the semiconductor layer having the rugged faces, and a different semiconductor layer is formed on the stripe type semiconductor layers thereof in this condition. CONSTITUTION:Semiconductor layers 2, 3, 4 are formed in order as a buffer layer, an active layer and a clad layer on a semiconductor substrate Then, stripe type mask layers 5 are formed on the layer. The stripe type semiconductor layers 6 of a large number are formed using the layers 5 as the mask. Then the layers 5 are removed, and the semiconductor layer 8 having the rugged faces 7 is formed from the layer 3 according to the melt back treatment using the layers 6 as the mask. The semiconductor layer 9 to act as the clad layer, and having the different composition from the layer 3 is formed on the layer 8 burying the layers 6. A semiconductor layer 10 is formed as the layer for provision of an electrode on the layer 9 in succession. According to this manufacturing method, even when the surface of the layer 8 is molten back in a solution for formation of the layer 9, unnecessary deformation of the rugged faces 7 provided to the layer 8 is not generated. |
| 公开日期 | 1984-03-15 |
| 申请日期 | 1982-09-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43649]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | NOGUCHI ETSUO,SUZUKI YOSHIO,NAGAI HARUO. Manufacture of semiconductor laser having periodic structure. JP1984046083A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。