Laser diode structure with blocking layer
文献类型：专利
| 作者 | REID, BENOIT; FILY, ARNAUD CHRISTIAN; LICHTENSTEIN, NORBERT; KNIGHT, D. GORDON |
| 专利号 | US20050141578A1 |
| 著作权人 | BOOKHAM TECHNOLOGY PLC |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diode structure with blocking layer |
| 英文摘要 | The present invention provides a self-aligned laser structure that can be fabricated on a p-substrate and provides a means for limiting the leakage current thereby improving the overall efficiency of the structure. The waveguide laser structure comprises a first series of layers deposited in sequence upon a p-InP, p-GaAs or p-GaN substrate or other form of p-substrate, wherein these layers form the p-clad layer. An active layer is subsequently deposited upon this first series of layers. A blocking layer of insulating or semi-insulating material is deposited upon the active layer, wherein this blocking layer has a trench formed therein, wherein this semi-insulating layer or layers are epitaxially deposited. The blocking layer provides a means for limiting current flow therethrough, thereby reducing leakage current. Upon the blocking layer are deposited a second series of layers completing the laser structure, wherein this second series of layers form the n-clad layer. Since the n-clad layer contains more than one material, the structure provides lateral waveguiding. Upon the completion of the deposition of all of the layers, a positive electrode is formed on the bottom surface of the first series of layers and a negative electrode is formed on the top of the second series of layers. |
| 公开日期 | 2005-06-30 |
| 申请日期 | 2004-06-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43651]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | BOOKHAM TECHNOLOGY PLC |
| 推荐引用方式 GB/T 7714 | REID, BENOIT,FILY, ARNAUD CHRISTIAN,LICHTENSTEIN, NORBERT,et al. Laser diode structure with blocking layer. US20050141578A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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