Embedded structure semiconductor and its manufacture
文献类型：专利
| 作者 | MATSUMOTO SHINICHI; NAKANO YOSHINORI; MOTOSUGI TSUNEJI |
| 专利号 | JP1991120775A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Embedded structure semiconductor and its manufacture |
| 英文摘要 | PURPOSE:To obtain a low-threshold current, a high efficiency, and a high-frequency characteristic by providing a mesa protection layer and a spacer layer consisting of two kinds of semiconductor layers consisting of an n-type InP which is in contact with an activation layer and a P-type InP which is in contact with this n-type InP. CONSTITUTION:An activation layer 40 is sandwiched by an n-type InP clad layer 38 and a P-type InP clad layer 34 on a P-InP substrate 35 from the upper and lower directions. An electrode layer 37 consisting of an n-InGaAsP is provided on the n-type InP clad layer 38 to achieve an improved contact with an n-type electrode 3 A mesa protection layer 39 consisting of a P-type InP is formed only at a part from an area closer to a boundary 41 between the electrode layer 37 and the n-type InP clad layer 38 to the substrate. A mesa part 42 with the mesa protection layer is sandwiched at both sides by a current block layer 33 in semi-insulation crystal which is the Fe-doped InP, thus reducing leak current passing through the mesa protection layer, restricting diffusion of Fe into the activation layer, and achieving a stable operation over a long period of time. |
| 公开日期 | 1991-05-22 |
| 申请日期 | 1989-10-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43700]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO SHINICHI,NAKANO YOSHINORI,MOTOSUGI TSUNEJI. Embedded structure semiconductor and its manufacture. JP1991120775A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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