Double hetero-junction type semiconductor light emitting element
文献类型：专利
| 作者 | KATSUI AKINORI |
| 专利号 | JP1992133478A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Double hetero-junction type semiconductor light emitting element |
| 英文摘要 | PURPOSE:To enable a semiconductor light emitting element to emit visible rays of green to blue light short in wavelength by a method wherein a semiconductor crystal substrate is formed of ZnTe, a first, a second, and a third semiconductor crystal layer are formed of MgxZn1-xTe, and a figure of X in the composition of the second semiconductor crystal layer is specified. CONSTITUTION:In a double hetero-junction type semiconductor light emitting element, a semiconductor crystal substrate 1 is formed of ZnTe. A semiconductor laminated body 5 composed of a first, a second, and a third semiconductor crystal layer, 2, 3, and 4, is formed of MgxZn1-xTe (0 |
| 公开日期 | 1992-05-07 |
| 申请日期 | 1990-09-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43720]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | KATSUI AKINORI. Double hetero-junction type semiconductor light emitting element. JP1992133478A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。