Gallium nitride based compound semiconductor light-emitting device
文献类型：专利
| 作者 | NIDO, MASAAKI; KURAMOTO, MASARU; YAMAGUCHI, ATSUSHI |
| 专利号 | US20030052316A1 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Gallium nitride based compound semiconductor light-emitting device |
| 英文摘要 | A light-emitting semiconductor device includes an active layer interposed between first-side and second-side cladding layer, and at least one of first-side and second-side optical guide layers. The following four equations are satisfied: 0.15<=h; |x-y|<=0.02; 0.02<=x<=0.06; and 0.34x-0.49<=d1+2h, where "h" is a total thickness of the first-side and second-side optical guide layers; "d1" is a thickness of the first-side cladding layer; "x" is a first Al-index of a first AlGaN bulk crystal which has a first refractive index equal to a first averaged refractive index of the first-side cladding layer; and "y" represents a second Al-index of a second AlGaN bulk crystal which has a second refractive index equal to a second averaged refractive index of the second-side cladding layer. |
| 公开日期 | 2003-03-20 |
| 申请日期 | 2002-09-09 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43731]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | NIDO, MASAAKI,KURAMOTO, MASARU,YAMAGUCHI, ATSUSHI. Gallium nitride based compound semiconductor light-emitting device. US20030052316A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。