Manufacture of semiconductor laser diode element
文献类型：专利
| 作者 | HORIKAWA HIDEAKI; TAKANO HIROSHI; IMANAKA KOUICHI |
| 专利号 | JP1984028397A |
| 著作权人 | OKI DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser diode element |
| 英文摘要 | PURPOSE:To improve the performance of a laser element by a method wherein the condition for N-InP growth is alleviated by utilizing the solid phase diffusion of Zn when a Zn doped P-InP is grown. CONSTITUTION:A P-InP substrate 11 is etched to mesa form, and the N-InP 12, the Zn doped P-InP 13, an InGaAsP active layer 14, and the N-InP 15 are epitaxially formed in liquid phase. At the time of forming the layer 12, the mesa upper side is much narrower than the bottom side and slow in growth; therefore the solid phase diffused layer 16 of Zn is generated at the time of forming the layer 13, and accordingly the N-layer at the mesa upper side changes into a P- layer. On the other hand, since the layer 12 is thicker than the upper side, a part without Zn diffusion remains at the bottom of the mesa. The solid phase diffusion of Zn is generated also in the active layer 14, but does not come to influence the characteristic of oscillation. When the Zn diffusion comes to the N-layer 15, the inversion to P type is prevented by increasing the carrier concentration of the layer 15. This constitution enables to alleviate the condition for the growth of an N-InP block layer, improve the performance of a laser element, and thus simplify the manufacture thereof. |
| 公开日期 | 1984-02-15 |
| 申请日期 | 1982-08-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43743]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | HORIKAWA HIDEAKI,TAKANO HIROSHI,IMANAKA KOUICHI. Manufacture of semiconductor laser diode element. JP1984028397A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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