Apparatus for manufacturing semiconductor crystal
文献类型：专利
| 作者 | TANAKA TOSHIO; NARA AIICHIRO |
| 专利号 | JP1988257216A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Apparatus for manufacturing semiconductor crystal |
| 英文摘要 | PURPOSE:To change material gases quickly and to make it possible to form a plurality of epitaxial layers having steep interfaces, by providing material-gas feeding systems, which individually feed the material gases for growing the specified epitaxial layers into reaction part. CONSTITUTION:A P-type GaAs gas system 21, an N-type GaAs gas system 22, a P-type AlGaAs gas system 23 and an N-type AlGaAs gas system 24 are connected to a reacting tube 3 so that the gases can be individually supplied by using valves 261-164. In this method, the material gases can be quickly changed when a plurality of epitaxial layers are formed. Therefore, the multilayered epitaxial layers having steep interfaces con be grown. Since the remaining and adsorption of the material gas in pipings are less, the epitaxial layer, which has an atom layer of about several tens of Angstroms can be grown. |
| 公开日期 | 1988-10-25 |
| 申请日期 | 1987-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43744]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO,NARA AIICHIRO. Apparatus for manufacturing semiconductor crystal. JP1988257216A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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