Control of output beam divergence in a semiconductor waveguide device
文献类型：专利
| 作者 | QIU, BOCANG |
| 专利号 | US20060274793A1 |
| 著作权人 | INTENSE, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Control of output beam divergence in a semiconductor waveguide device |
| 英文摘要 | A semiconductor laser device incorporates a beam control layer ( 42, 41 ) for reducing far field and beam divergence. Within the beam control layer, a physical property of the semiconductor material varies as a function of depth through, the beam control layer, by provision of a first sub-layer ( 42 ) in which the property varies gradually from a first level to a second level, and a second sub-layer ( 41 ) in which the property varies from said second level to a third level. In the preferred arrangement, the conduction band edge of the semiconductor has a V-shaped profile through the beam control layer. |
| 公开日期 | 2006-12-07 |
| 申请日期 | 2004-09-16 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43747]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTENSE, INC. |
| 推荐引用方式 GB/T 7714 | QIU, BOCANG. Control of output beam divergence in a semiconductor waveguide device. US20060274793A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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