Etch mirror semiconductor laser
文献类型：专利
| 作者 | SAITO HIDEHO |
| 专利号 | JP1991030381A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Etch mirror semiconductor laser |
| 英文摘要 | PURPOSE:To enable the title etch mirror semiconductor laser in low threshold value to be manufactured by a method wherein the total thickness of an active layer and one or two guide layers in contact with the active layer is specified to be within the range of 0.25-0.35mum. CONSTITUTION:The title semiconductor laser is composed of an n type InP substrate 1, an n type InP clad layer 2, an undoped InGaAsP layer 3, a p type InGaAsP guide layer 4, a p type InP clad layer 5, a p type InGaAsP contact layer 6, an n type electrode 7, a p type electrode 8 and an etching end 9 (etching surface) while the total thickness of the active layer 3 and the guide layer 4 is specified to be within the range of 0.25-0.35mum. In such a constitution, the decline in the reflectance by the gradient of etch mirror is small while the entrapment coefficient of laser beams into the active layer 3 is large. Through these procedures, the title etch mirror semiconductor laser in low threshold value can be manufactured. |
| 公开日期 | 1991-02-08 |
| 申请日期 | 1989-06-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43748]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | SAITO HIDEHO. Etch mirror semiconductor laser. JP1991030381A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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