Semiconductor device and its manufacture
文献类型：专利
| 作者 | YASHIMA HIDEO; TAGUCHI TSUNEMASA |
| 专利号 | JP1992029332A |
| 著作权人 | SHOWA DENKO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and its manufacture |
| 英文摘要 | PURPOSE:To enable the epitaxial growth of wurtzite crystal onto a zincblende crystal substrate by providing it with a heterojunction build-up part where strain superlattice layer consisting of two or more kinds of II-IV compound semiconductors is formed directly on a substrate. CONSTITUTION:Using a decompressed MOCVD method, a high quality of ZnCdS- ZnS strain superlattice, which exhibits notable quantum confinement effect, is formed directly on a semiconductor substrate of CaAs, or the like. In this semiconductor device, it can be performed naturally to make use of the II-IV compound semiconductor strain superlattice formed directly on the semiconductor substrate, as a nonlinear optical active layer. By forming the distorted superlattice heterojunction build-up layer of II-IV compound semiconductor directly on the semiconductor substrate this way, a good quality of epitaxial growth crystal can be attained. |
| 公开日期 | 1992-01-31 |
| 申请日期 | 1990-05-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43751]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHOWA DENKO KK |
| 推荐引用方式 GB/T 7714 | YASHIMA HIDEO,TAGUCHI TSUNEMASA. Semiconductor device and its manufacture. JP1992029332A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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