Manufacture of optical semiconductor element and growing method for low resistance semiconductor layer
文献类型：专利
| 作者 | CHICHIBU SHIGEHIDE; KUSHIBE MITSUHIRO; HIRAYAMA YUZO; FUNAMIZU MASAHISA; ONOMURA MASAAKI; EGUCHI KAZUHIRO |
| 专利号 | JP1991201585A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of optical semiconductor element and growing method for low resistance semiconductor layer |
| 英文摘要 | PURPOSE:To separate a pn homojunction position from a board-regrowth boundary and to reduce an increase in a rising voltage or a reverse leakage current by automatically diffusing impurities of a high concentration p-type layer of a p-type InP clad layer during growing. CONSTITUTION:When Zn concentration is so controlled as to be gradually reduced continuously from saturated concentration in a thermal equilibrium as separated from an active layer by using dimethyl zinc to reduce the saturated concentration to at least 40% or more, its growth is started, for example, at an arbitrary temperature from 550 to 600 deg.C, and ended at an arbitrary temperature from 620 to 680 deg.C to be controlled in the concentration. Then, gas flow in a reaction tube may not be disordered. Accordingly, irregularities in the composition, concentration in a growing wafer, fluctuations can be reduced. That is, doping concentration is varied by not altering dopant gas flow but fixing to a predetermined value. |
| 公开日期 | 1991-09-03 |
| 申请日期 | 1989-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43756]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | CHICHIBU SHIGEHIDE,KUSHIBE MITSUHIRO,HIRAYAMA YUZO,et al. Manufacture of optical semiconductor element and growing method for low resistance semiconductor layer. JP1991201585A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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