Manufacture of photosemiconductor device
文献类型：专利
| 作者 | SHIMADA NAOHIRO; NAGASAKA HIROKO; MOGI NAOTO |
| 专利号 | JP1984119780A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of photosemiconductor device |
| 英文摘要 | PURPOSE:To enable to form a buried structure with good reproducibility by a method wherein liquid growth is performed by suitably controlling the line interval of an oxide film mask, and the amount of meltback cover and the depth. CONSTITUTION:An N-clad layer 2, an N-guide layer 3, an N-active layer 4, a P-guide layer 5, a P-clad layer 6, an N-contact layer 7, and a GaAlAs layer 8 are epitaxially grown on an N-GaAs substrate Next, the layer 8 is formed into stripes by etching, thus being decided as a mask for meltback control. Then, the second epitaxial growth is performed while the meltback is putting over from the surface of the laminated structure. At this time, the way of meltback cover, the amount, and the depth are controlled by varying the interval of the layers 8. When the epitaxial growth is finished, the buried layers 10 are epitaxially grown by cooling and deposition under oversaturation. |
| 公开日期 | 1984-07-11 |
| 申请日期 | 1982-12-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43761]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | SHIMADA NAOHIRO,NAGASAKA HIROKO,MOGI NAOTO. Manufacture of photosemiconductor device. JP1984119780A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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