Semiconductor laser device and optical recording and reproducing device
文献类型：专利
| 作者 | KAWAGUCHI HITOSHI; YAMAMOTO MANABU |
| 专利号 | JP1986172387A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and optical recording and reproducing device |
| 英文摘要 | PURPOSE:To control laser characteristics by mounting a semiconductor laser, a member, which is arranged on one end surface of the laser and reduces the reflectivity of laser beams on the end surface, and a reflecting body, which is faced to the member each other and isolated and disposed. CONSTITUTION:An antireflection film 5 arranged on an end surface 3' in the end surfaces of a resonator for a semiconductor laser 1 is formed through a coating in approximately 2,000Angstrom thickness of a substance such as SiO or SiO2 on a GaAs group semiconductor laser. Reflectivity on the end surface 3' can be reduced to 10-10 by the antireflection film 5. A reflecting body 8 coated with a metallic film is faced to the antireflection film 5 each other and disposed in a manner such as an optical recording re-proximity manner mentioned below. When a space (d) between the reflecting body 8 and the laser end surface 3' is determined within 0.1-10mum, in a semiconductor laser device, an external resonator is shaped by a resonator end-surface 3 and the reflecting body 8 and laser oscillation is generated because the amount of light fed back into the semiconductor laser 1 is increased. When the semiconductor laser 1 is driven by the operating currents ID of the semiconductor laser 1, the generation of laser oscillation is determined according to the presence of the reflecting body 8. |
| 公开日期 | 1986-08-04 |
| 申请日期 | 1985-01-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43762]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | KAWAGUCHI HITOSHI,YAMAMOTO MANABU. Semiconductor laser device and optical recording and reproducing device. JP1986172387A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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