Method of fabricating a semiconductor laser
文献类型：专利
| 作者 | TAKASHI, MOTODA; MANABU, KATO |
| 专利号 | GB2293489A |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of fabricating a semiconductor laser |
| 英文摘要 | A visible tight semiconductor laser forming a doublehetero structure on a GaAs substrate comprises a n-type GaAs buffer layer (3), an n-type AlGaInP cladding layer (4), and AlxGa(1-x)InP active layer (5), a first p-type AlGaInP cladding layer (6a), a -type GaInP etching stopper layer (15), a second p-type AlGaInP cladding layer (6b), and a p-type GaAs cap layer (8) which do not include a p-type GaInP energy band discontinuity relaxing layer. A stripe-shaped selective mask (17) is formed on the DH crystal, and the p-type GaAs cap layer (8) is selectively etched using the selective mask. The second p-type AlGaInP cladding layer (6b) is selectively etched to the p-type GaInP etching stopper layer (15), the process forming a stripe-shaped ridge. Therefore, a high precision ridge can be formed easily. |
| 公开日期 | 1996-03-27 |
| 申请日期 | 1995-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43769]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | TAKASHI, MOTODA,MANABU, KATO. Method of fabricating a semiconductor laser. GB2293489A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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