Optical integrated element and manufacture thereof
文献类型:专利
作者 | HIBIYA TAKETOSHI; MIZUTANI TAKASHI |
专利号 | JP1987008561A |
著作权人 | NEC CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Optical integrated element and manufacture thereof |
英文摘要 | PURPOSE:To obtain a compact optical integrated element, which can be readily fabricated, by firming a laser oscillating part and a light isolator part on the same substrate in a monolithic mode. CONSTITUTION:On a garnet single crystal (111) substrate 5 comprising non- magnetic cadmium gallium garnet (Gd3Ga5O12) having a lattice constant of 12.383Angstrom , a magnetic garnet single crystal film 4 of (YBi)3(FeAl)5O12 having a lattice constant of 12.383Angstrom is grown. On the film 4, an active layer 2 of the single crystal film of AlGaInSb is grown so that the layer 2 is held between a N-type and P-type clad layers 1 and 3. A laser diode having a stripe structure is formed from the AlGaInSb epitaxial film formed in this way. In this diode, one end surface is vertical and the other end surface becomes the slant surface exactly at 45 degrees. The distance between the end surface and the end surface is 200mum. Etching is carried out in this way. Thus, an optical integrated circuit, in which a laser oscillating part and a light isolator part are formed in a unitary body in a monolithic mode is obtained. |
公开日期 | 1987-01-16 |
申请日期 | 1985-07-04 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/43771] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NEC CORP |
推荐引用方式 GB/T 7714 | HIBIYA TAKETOSHI,MIZUTANI TAKASHI. Optical integrated element and manufacture thereof. JP1987008561A. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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