Manufacture of buried semiconductor laser
文献类型：专利
| 作者 | KIHARA KATSUHIRO |
| 专利号 | JP1986202488A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of buried semiconductor laser |
| 英文摘要 | PURPOSE:To improve a manufacturing yield by growing a paired substrate reverse conductive type block layers for burying both sides of strip mesa which contains an active layer of double hetero junction thickly to become higher than the upper surface of the mesa, thereby suppressing the improper growth. CONSTITUTION:An InGaAsP active layer 2 and a P type InP clad layer 3 are grown on an InP substrate A mask film 5 of SiO2 is formed to form a strip thereon, with it as a mask it is mesa etched to form a mesa 6 in a reverse mesa. Then, P type InP block layers 9 are grown at both sides of the mesa 6, and then an N type InP block layer 8 a P-type InP layer 13 are grown. Then, the film 5 is removed, a P type InP layer 13 and a P type InGaAsP contacting layer 14 are grown on the entire surface, and metal electrodes 9, 10 ohmically contacted with the upper and lower surfaces are coated to complete a semiconductor laser. |
| 公开日期 | 1986-09-08 |
| 申请日期 | 1985-03-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43792]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KIHARA KATSUHIRO. Manufacture of buried semiconductor laser. JP1986202488A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。