Beam detector integrating semiconductor laser array device
文献类型：专利
| 作者 | MATSUMOTO SHOHEI; UCHIDA MAMORU |
| 专利号 | JP1987004385A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Beam detector integrating semiconductor laser array device |
| 英文摘要 | PURPOSE:To remove the cross-talk phenomenon among the blocks and to drive the semiconductor lasers individually and steadily by forming a beam shielding wall between a pair of semiconductor laser and beam detector. CONSTITUTION:Firstly, a wafer of lateral mode control semiconductor laser is formed, in which a cladding layer 4, an active layer 5, a cladding layer 6 and a cap layer 7 are laminated on the stripe V-groove 3 reaching a substrate 1 which is formed on a block layer 2 on the substrate Next, N-type electrodes 8 are formed on that wafer for each semiconductor laser 11 and light detector 12. After that, the element isolation into each semiconductor laser 11 and light detector 12 is effected by the dry etching reaching the substrate At this time, beam shielding walls 9 of mesa stripe form extending to the rear end of the beam detectors 12 are formed among the lasers 1 Consequently, the cross-talk phenomenon of monitor beams can be prevented. |
| 公开日期 | 1987-01-10 |
| 申请日期 | 1985-07-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43805]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO SHOHEI,UCHIDA MAMORU. Beam detector integrating semiconductor laser array device. JP1987004385A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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