Manufacture of semiconductor laser element
文献类型：专利
| 作者 | YOSHIDA TAKASHI; SAITO YOSHITO; OTSUKA SHIGEKI; MUNAKATA TSUTOMU |
| 专利号 | JP1992174583A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser element |
| 英文摘要 | PURPOSE:To form a highly accurate and highly reliable semiconductor laser element by removing an undoped layer used as en etching stopper at the bottom section of a trench by generating side etching below a current blocking layer. CONSTITUTION:A trench 28 is formed by etching after a P-InP buffer layer 22, undoped InGaAsP layer 23, N-InP current blocking layer 24, P-InP current blocking layer 25, and Si3N4 film 26 are successively formed on a P-InP substrate 2 After the trench 28 is formed, the Si3N4 film 26 and undoped layer 23 are removed. When the layer 23 is removed, the layer 23 gets into the current blocking layer 24. Then a P-InP clad layer 29, P-InGaAsP active layer 30, N-InP clad layer 31, N-InGaAsP contact layer 32, and N-InP cap layer 33 are successively formed on the trench 28 and current blocking layer 25. Therefore, the width controllability of the trench is improved and a highly accurate and highly reliable semiconductor laser can be formed. |
| 公开日期 | 1992-06-22 |
| 申请日期 | 1990-11-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43810]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | YOSHIDA TAKASHI,SAITO YOSHITO,OTSUKA SHIGEKI,et al. Manufacture of semiconductor laser element. JP1992174583A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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