Epitaxial deposition of thin films
文献类型：专利
| 作者 | EPLER, JOHN E.; CHUNG, HARLAN F.; PAOLI, THOMAS L. |
| 专利号 | EP0336672A2 |
| 著作权人 | XEROX CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Epitaxial deposition of thin films |
| 英文摘要 | Changes in the in situ geometrical and stoichiometric properties of deposited films are brought about by employing a radiation beam directed to a spot which is scanned across the growth surface in a chemical vapor deposition reactor system, e.g., MOCVD system. Gaussian profile spot intensity variations at selected regions at the growth surface will selectively enhance the deposition growth rate and/or in situ stoichiometric content of the deposited film. Selective monotonic increasing and decreasing changes in film thickness and stoichiometric content can be accomplished while the spot is scanned across the growth surface. Such changes or variations in film thickness and stoichiometric content are useful in fabricating semiconductor devices having regions of different bandgap and refractive index properties in one or more semiconductor layers of such devices. These property variations may be utilized to produce buried index waveguiding features in such devices and produce multiple emitters each having a different wavelength emission useful in printer and optical communication applications. |
| 公开日期 | 1989-10-11 |
| 申请日期 | 1989-04-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43812]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | XEROX CORPORATION |
| 推荐引用方式 GB/T 7714 | EPLER, JOHN E.,CHUNG, HARLAN F.,PAOLI, THOMAS L.. Epitaxial deposition of thin films. EP0336672A2. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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