Buried type semiconductor light guide
文献类型：专利
| 作者 | MATSUOKA HARUJI; NISHIWAKI YOSHIKAZU; NISHIURA YOUZOU; OKAMOTO KENJI |
| 专利号 | JP1984143108A |
| 著作权人 | SUMITOMO DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried type semiconductor light guide |
| 英文摘要 | PURPOSE:To obtain a light guide superior in conformability by using the anisotropic etching characteristics of a compound semiconductor, forming a groove having a nearly circular section on the compound semiconductor, and filling the groove with a compound semiconductor higher in refraction index than the surrounding compound semiconductor. CONSTITUTION:A mask 16 of photoresist, Ti, or the like is formed on the first crystal face (100) of an InP type semiconductor, e.g. used as a substrate 10, and a groove 20 having a convex bottom is formed by exercising, e.g. 3wt% Br2- CH3OH etching soln. through the stripe-shaped window 18 of the mask 16. Next, the mask 16 is removed, and the groove 20 is filled by epitaxially growing a layer of In1-xGaxAsyP1-y higher in refractive index than the substrate 10. Then, the light guide layer 12 of the layer 22 having a nearly circular section is left and the other part is removed. Finally, an upper layer 14 made of In1-uGauAsvP1-v lower in refractive index than the layer 12 is formed on the surface of the substrate 10, thus enhancing the mode conformability of an optical fiber. |
| 公开日期 | 1984-08-16 |
| 申请日期 | 1983-02-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43829]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | MATSUOKA HARUJI,NISHIWAKI YOSHIKAZU,NISHIURA YOUZOU,et al. Buried type semiconductor light guide. JP1984143108A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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