Optical integrated device
文献类型:专利
作者 | KOYAMA, KENJI; HASHIMOTO, JUN-ICHI; KATSUYAMA, TSUKURU |
专利号 | US20050220158A1 |
著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
国家 | 美国 |
文献子类 | 发明申请 |
其他题名 | Optical integrated device |
英文摘要 | The present invention is to provide an optical integrated device formed on the GaAs substrate and with reduced dispersion of the optical coupling of the but-joint between the active and the passive devices. The GaAs substrate of the invention is divided into two regions, and the lower cladding layer extends over both regions. The active layer, having a quantum well structure with band-gap energy smaller than 3 eV, is arranged of the lower cladding layer in the first region, while the GaAs core layer is also arranged on the lower cladding layer but in the second region thereof. Thus, the cure layer may optically couple with the active layer. |
公开日期 | 2005-10-06 |
申请日期 | 2005-03-29 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/43839] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
推荐引用方式 GB/T 7714 | KOYAMA, KENJI,HASHIMOTO, JUN-ICHI,KATSUYAMA, TSUKURU. Optical integrated device. US20050220158A1. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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