Fabricating method of semiconductor laser and semiconductor and semiconductor laser
文献类型：专利
| 作者 | HWANG, SUN-LYEONG; PARK, BYEONG-HOON |
| 专利号 | US20060159133A1 |
| 著作权人 | SAMSUNG ELECTRONICS CO. ; LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Fabricating method of semiconductor laser and semiconductor and semiconductor laser |
| 英文摘要 | A method for manufacturing a semiconductor laser is provided. The method includes the steps of sequentially growing a lower clad, a lower waveguide and a multi-quantum well on a semiconductor substrate; forming, on the multi-quantum well, masks each possessing a first area which has a constant width and a second area which extends from the first area and has a gradually decreasing width, such that the masks are symmetrical to each other; sequentially growing an upper waveguide and an upper clad on the multi-quantum well through selective area growth; implementing a mesa-etching process from the upper clad to the lower clad; and growing, on the semiconductor substrate, a current blocking layer to have the same height as the upper clad. |
| 公开日期 | 2006-07-20 |
| 申请日期 | 2005-07-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43850]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 1.SAMSUNG ELECTRONICS CO. 2.LTD. |
| 推荐引用方式 GB/T 7714 | HWANG, SUN-LYEONG,PARK, BYEONG-HOON. Fabricating method of semiconductor laser and semiconductor and semiconductor laser. US20060159133A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。