Semiconductor light-emitting element and its manufacture
文献类型：专利
| 作者 | HOSHINA JUNICHI; OGURA MOTOTSUGU |
| 专利号 | JP1991038080A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element and its manufacture |
| 英文摘要 | PURPOSE:To make it possible to obtain a semiconductor light-emitting element, which is stably actuated in a basic transverse mode up to a high output, by a method wherein clad layers doped selectively into a first conductivity type and an active layer are formed by superposition only on one side of the surface of a substrate and clad layers doped selectively into a second conductivity type are formed only on the sides opposite to the clad layers on the substrate. CONSTITUTION:An n-type Ga0.3Al0.7As clad layer 2 is formed on one side of the surface of an n-type GaAs substrate 1, a non-doped high-resistance Ga0.3Al0.7As clad layer 3 is formed on the side opposite to the layer 2, a non-doped Ga0.9Al0.1As active layer 4 is formed on the layers 2 and 3 and moreover, a non doped high-resistance Ga0.3Al0.7As clad layer 5 is formed on one side of the surface of the layer 4, a p-type Ga0.3Al0.7As clad layer 6 is formed on the side opposite to the layer 5 and a p-type GaAs contact layer 7 is formed by superposition on the layers 5 and 6. Moreover, electrons and holes, which are injected in the layer 4 through the layers 2 and 4, are injected so as to form a recombination region 10 at the center line part of the layer 4. Accordingly, a current can be narrowed without providing a current constricting layer and moreover, carriers can be injected in a narrow distribution. Thereby, a semiconductor light-emitting element, which is stably actuated in a basic transverse mode up to a high output, can be obtained. |
| 公开日期 | 1991-02-19 |
| 申请日期 | 1989-07-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43851]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HOSHINA JUNICHI,OGURA MOTOTSUGU. Semiconductor light-emitting element and its manufacture. JP1991038080A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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