Liquid phase composition adjusting method in liquid phase epitaxial growth
文献类型：专利
| 作者 | SHIMURA MIKIHIKO; FUJIMOTO AKIRA |
| 专利号 | JP1983074036A |
| 著作权人 | TATEISHI DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase composition adjusting method in liquid phase epitaxial growth |
| 英文摘要 | PURPOSE:To drastically curtail a time required for weighing by severely weighing only materials except for GaP in case of obtaining an In-Ga-As-P solution with In used as the solvent. CONSTITUTION:For obtaining an In-Ga-As-P solution with In used as the solvent which is used for liquid phase epitaxial growth of the mixed In1-xGaxAs1-xP2 (0<=x<0<=z<1) on a semiconductor substrate GaAs1-yPy (0<=y<1), severe weighing is carried out only for materials except for GaP having the highest melting point. Amount of GaP to be added exceeds the solubility thereof at a growth temperature or saturation temperature of solution. Thereby, the solubility of GaP is inevitably determined by the solubilities of other materials. As a result, a liquid phase composition can be easily adjusted within a short period of time. |
| 公开日期 | 1983-05-04 |
| 申请日期 | 1981-10-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43890]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TATEISHI DENKI KK |
| 推荐引用方式 GB/T 7714 | SHIMURA MIKIHIKO,FUJIMOTO AKIRA. Liquid phase composition adjusting method in liquid phase epitaxial growth. JP1983074036A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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