Formation of superlattice thin film
文献类型：专利
| 作者 | YAMAZAKI KOJI |
| 专利号 | JP1989276618A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Formation of superlattice thin film |
| 英文摘要 | PURPOSE:To form a pattern of a superlattice thin film without an etching operation by a method wherein a deposit is not laminated on a mask formed on a semiconductor substrate and the superlattice thin film is formed selectively only on the semiconductor substrate. CONSTITUTION:An SiO2 film 2 with a thickness of 1mum is deposited on a GaAs substrate 1 by a thermal CVD method. A resist 3 is coated on the SiO2 film; the resist is patterned; the SiO2 film is etched. Then, a ZnG-ZnSe superlattice thin film 4 is grown selectively by using an MOCVD apparatus. By this setup, a technically difficult etching process of the superlattice thin film is not required; accordingly, an uneven part or the like is not formed on side faces of the superlattice thin film; the performance in a device, especially an optical element, is enhanced. |
| 公开日期 | 1989-11-07 |
| 申请日期 | 1988-04-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43893]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | YAMAZAKI KOJI. Formation of superlattice thin film. JP1989276618A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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