Selectively growing method for semiconductor
文献类型：专利
| 作者 | KOIKE KENICHI; SASAKI GORO; KUWATA NOBUCHIKA |
| 专利号 | JP1990125483A |
| 著作权人 | SUMITOMO ELECTRIC IND LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Selectively growing method for semiconductor |
| 英文摘要 | PURPOSE:To prevent an insulating film from cracking or peeling by selectively removing a crystalline layer and a thin film, forming the insulating film, and selectively crystal-growing a second crystalline layer for an electronic integrated circuit in a removed part. CONSTITUTION:A second crystalline layer 5 formed with an electronic integrated circuit such as FET, etc., is selectively epitaxially grown on a semiconductor substrate 1 in which a first crystalline layer 2 and a thin film 3 are removed by an organic metal vapor epitaxial method. After the growing, the integrated circuit is formed on the layer 5. In this case, since the layer 2 and the film 3 are masked with an insulating film 4, the layer 5 for the integrated circuit is not formed thereon. Since the film 3 made of InP and the film 4 made of SiN has satisfactory adhesive properties, the film 4 is not cracked, or peeled, and there is no growth of the crystal of the layer 5 erroneously on the layer 2. |
| 公开日期 | 1990-05-14 |
| 申请日期 | 1988-11-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43903]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC IND LTD |
| 推荐引用方式 GB/T 7714 | KOIKE KENICHI,SASAKI GORO,KUWATA NOBUCHIKA. Selectively growing method for semiconductor. JP1990125483A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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