High-power semiconductor laser
文献类型：专利
| 作者 | MIHASHI YUTAKA; GOTO YUKIO; NAGAI YUTAKA |
| 专利号 | JP1987061384A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | High-power semiconductor laser |
| 英文摘要 | PURPOSE:To raise the output by widening the width of an active region at the end and in the vicinity to widen a light emitting region at the end to reduce a light density, thereby hardly causing an optical damage. CONSTITUTION:A P-type AlyGa1-yAs first clad layer 4 and an N-type GaAs current block layer 5 are grown on a P-type GaAs substrate 3, an inverted- sectional stripe grooves 12, 12a are formed in the layer 5 so that the widths are altered in the laser 1 and in the vicinity 2 of the end. A P-type AlyGa1-yAs clad layer 6, a P-type, N-type or undoped AlxGa1-xAs active layer 7, an N-type AlyGa1-yAs clad layer 8 and an N-type GaAs contacting layer 9 are sequentially grown, and electrodes 10, 11 are formed. Generated light is led in the state closed in an active region 13, and when the active region 13a is widened near the end, the light is widened to widen the light emitting region in the end 2, thereby reducing a light density. |
| 公开日期 | 1987-03-18 |
| 申请日期 | 1985-09-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43904]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MIHASHI YUTAKA,GOTO YUKIO,NAGAI YUTAKA. High-power semiconductor laser. JP1987061384A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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