Semiconductor laser integrated photoconductive element
文献类型：专利
| 作者 | ISHINO MASATO; SASAI YOUICHI |
| 专利号 | JP1985127778A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser integrated photoconductive element |
| 英文摘要 | PURPOSE:To relatively readily position severely by forming a recess so that the active layer of a semiconductor laser element and the optical axis of a photowaveguide coincide on the element, depositing metal on the bottom, and securing the element with the substrate side disposed at upside. CONSTITUTION:A photowaveguide 2 is formed in a substrate 1, an etching mask is formed perpendicularly to the progressing direction of the light of the waveguide 2, partly removed by etching, to form a recess 3 and an incident end 4. The end 4 must be perpendicular to the propagating direction of the light, but the incident end desired even by wet etching can be obtained by considering the surface azimuth and etching. After metal 9 is deposited in the recess 3, a semiconductor chip is secured by disposing the substrate 5 upside so that the layer 6 of the laser and the optical axis of the waveguide 2 coincide. |
| 公开日期 | 1985-07-08 |
| 申请日期 | 1983-12-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43917]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | ISHINO MASATO,SASAI YOUICHI. Semiconductor laser integrated photoconductive element. JP1985127778A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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