Nitride semiconductor laser device and method of manufacturing the same
文献类型：专利
| 作者 | HA, KYOUNG-HO; RYU, HAN-YOUL |
| 专利号 | US20070098030A1 |
| 著作权人 | SAMSUNG ELECTRONICS CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Nitride semiconductor laser device and method of manufacturing the same |
| 英文摘要 | A semiconductor laser device is provided. The semiconductor laser device includes a substrate, and an n-material layer, an n-clad layer, an n-light waveguide layer, an active region, a nitride semiconductor layer, a metal layer and a metal-based clad layer sequentially formed on the substrate. The metal layer and the metal-based clad layer have a ridge shape and a current blocking layer is formed on sidewalls of the metal layer and the metal-based clad layer and an exposed surface of the nitride semiconductor layer. A p-electrode layer is formed on the ridge shaped metal layer and the current blocking layer. The semiconductor laser device uses the metal-based clad layer instead of AlxInyGa1-x-yN-based p-clad layer, thus preventing degradation of the active region. The semiconductor laser device also includes the thin metal layer between the metal-based clad layer and a p-GaN material of the nitride semiconductor layer, thus reducing contact resistance therebetween. Thus, it is possible to fabricate a high power, low voltage semiconductor laser device having a visible light wavelength. |
| 公开日期 | 2007-05-03 |
| 申请日期 | 2006-11-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43922]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SAMSUNG ELECTRONICS CO., LTD. |
| 推荐引用方式 GB/T 7714 | HA, KYOUNG-HO,RYU, HAN-YOUL. Nitride semiconductor laser device and method of manufacturing the same. US20070098030A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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