中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser device, semiconductor laser module, and optical fiber amplifier

文献类型:专利

作者OEDA, YSUO; MURO, KIYOFUMI; OKUBO, MICHIO
专利号WO2004004084A1
著作权人THE FURUKAWA ELECTRIC CO., LTD
国家世界知识产权组织
文献子类发明申请
其他题名Semiconductor laser device, semiconductor laser module, and optical fiber amplifier
英文摘要On an n-type substrate (1), an n-type cladding layer (2), an n-type waveguide layer (3), an n-type carrier-blocking layer (4), an active layer (5), a p-type carrier-blocking layer (6), and a p-type waveguide layer (7) are formed into a multilayer structure. Inside the p-type waveguide layer (7), an n-type current blocking layer (8) is formed in a portion excluding a stripelike partial region the longitudinal direction of which is parallel to the direction of light beam output. Over the p-type waveguide layer (7), a p-type cladding layer (9), a p-type contact layer (10), and a p-side electrode (11) are formed in a multilayer structure. On the lower side of the n-type substrate (1), an n-side electrode (12) is provided. The index of refraction of the n-type cladding layer (2) to the wavelength of the light entering from outside has a value equal to the effective index of refraction. The indexes of the n-type cladding layer (2) and the p-type cladding layer (9) to the wavelength of the outputted light beam are lower than the effective index of refraction.
公开日期2004-01-08
申请日期2003-06-27
状态未确认
源URL[http://ir.opt.ac.cn/handle/181661/43935]  
专题半导体激光器专利数据库
作者单位THE FURUKAWA ELECTRIC CO., LTD
推荐引用方式
GB/T 7714
OEDA, YSUO,MURO, KIYOFUMI,OKUBO, MICHIO. Semiconductor laser device, semiconductor laser module, and optical fiber amplifier. WO2004004084A1.

入库方式: OAI收割

来源:西安光学精密机械研究所

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