Semiconductor
文献类型：专利
| 作者 | HIRATANI YUJI; KASHIWA TORU |
| 专利号 | JP1989316987A |
| 著作权人 | 光技術研究開発株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor |
| 英文摘要 | PURPOSE:To decrease a threshold current density and to improve a spectrum in impurity by a method wherein a distributed feedback semiconductor multilayer film is provided onto a substrate and a hetero-structure containing an active layer is formed on a side face of a step composed of the upside of the substrate and the side wall of the semiconductor multilayer film. CONSTITUTION:A semiconductor multilayer film 12 is formed on a substrate 11 so as to generate a distributed feedback. An n-type clad layer 17 of InP crystal, an active layer 18 of GnInAsP crystal, and a P-type clad layer 19 of InP crystal are successively formed on the side face of a step 16 and up to the upside of the substrate 1 The active layer 18 formed on the side wall of the step 16 emits light rays and the emitted light is reflected and amplified through a double hetero-structure, and the light rays excited by such a laser action are emitted through induction from a projecting face 21 in a direction perpendicular to the face of the substrate 1 By these processes, a threshold current density can be decreased and the spectral purity can also be improved. |
| 公开日期 | 1989-12-21 |
| 申请日期 | 1988-06-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43937]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 光技術研究開発株式会社 |
| 推荐引用方式 GB/T 7714 | HIRATANI YUJI,KASHIWA TORU. Semiconductor. JP1989316987A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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