Group III Nitride LED with Undoped Cladding Layer
文献类型：专利
| 作者 | EDMOND, JOHN ADAM; DOVERSPIKE, KATHLEEN MARIE; KONG, HUA-SHUANG; BERGMANN, MICHAEL JOHN |
| 专利号 | US20060233211A1 |
| 著作权人 | CREE, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Group III Nitride LED with Undoped Cladding Layer |
| 英文摘要 | The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer. |
| 公开日期 | 2006-10-19 |
| 申请日期 | 2006-05-22 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43940]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CREE, INC. |
| 推荐引用方式 GB/T 7714 | EDMOND, JOHN ADAM,DOVERSPIKE, KATHLEEN MARIE,KONG, HUA-SHUANG,et al. Group III Nitride LED with Undoped Cladding Layer. US20060233211A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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