Laser diode array and fabrication method thereof
文献类型：专利
| 作者 | YAMAGUCHI, MASAYUKI; YAMAZAKI, HIROYUKI; KUDO, KOJI |
| 专利号 | EP0836255A1 |
| 著作权人 | NEC CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Laser diode array and fabrication method thereof |
| 英文摘要 | First to n-th single-axial-mode LDs are arranged on a semiconductor substrate, where n ≥ 2. Each of the first to n-th LDs has a stripe-shaped semiconductor active layer formed on or over the substrate, a stripe-shaped semiconductor guiding layer formed on one side of the active layer, and a stripe-shaped semiconductor cladding layer formed on the other side of the active layer. The guiding layers of the first to n-th LDs have first to n-th diffraction gratings, respectively. The (k + 1)-th period is equal to a sum of the k-th period and an increment, where 1 ≤ k ≤ (n - 1). The active layers of the first to n-th LDs have first to n-th gain peak wavelengths, respectively. The (k + 1)-th gain peak wavelength is equal to a sum of the k-th gain peak wavelength and an increment. The first to n-th LDs have first to n-th oscillation wavelengths with first to n-th wavelength differences from the first to n-th gain peak wavelengths, respectively. The first to n-th wavelength differences are within a specific acceptable range for low threshold currents and low wavelength chirping. The lasing characteristic fluctuation is limited within the acceptable range independent of an oscillation wavelength span of the LDs. The laser array can be integrated with a modulator. |
| 公开日期 | 1998-04-15 |
| 申请日期 | 1997-10-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43959]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORPORATION |
| 推荐引用方式 GB/T 7714 | YAMAGUCHI, MASAYUKI,YAMAZAKI, HIROYUKI,KUDO, KOJI. Laser diode array and fabrication method thereof. EP0836255A1. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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