Epitaxial growth method
文献类型：专利
| 作者 | MORITA ETSUO |
| 专利号 | JP1989154513A |
| 著作权人 | ソニー株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Epitaxial growth method |
| 英文摘要 | PURPOSE:To form an epitaxial layer of GaInP or AlGaInP having a superlattice structure of single orientation, by using a GaAs substrate wherein two or more faces out of four crystallographically equivalent faces {111} on which As atoms of GaAs arrange, do not become equivalent on a surface. CONSTITUTION:On an N type GaAs substrate 1, a GaxIn1-xP layer 2, e.g., is epitaxially grown. This GaAs substrate 1 has a crystal orientation wherein only one normal vector (n) can be drawn from the physical surface of the GaAs substrate 1 toward outside. The normal vector (n) is set from the face {111} where Ga atoms being group III elements arrange, toward the face {111} where As atoms being group V elements arrange. On this GaAs substrate 1, the GaxIn1-xP layer 2 is epitaxially grown by a normal pressure MOCVD method. Only the superlattice of face (111) which is one of four crystallographically equivalent face {111} of the GaxIn1-xP layer 2 grows in dominant manner, and the growth of superlattice of other orientations are restrained. As a result, the GaxIn1-xP layer 2 having superlattice structure of single orientation can be epitaxially grown on the GaAs substrate |
| 公开日期 | 1989-06-16 |
| 申请日期 | 1987-12-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43970]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ソニー株式会社 |
| 推荐引用方式 GB/T 7714 | MORITA ETSUO. Epitaxial growth method. JP1989154513A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。