Article comprising a SiOx layer and method of making the article
文献类型：专利
| 作者 | CHAND, NARESH; OSENBACH, JOHN WILLIAM; COMIZZOLI, ROBERT BENEDICT; ROXLO, CHARLES BLAKELY; TSANG,WON-TIEN; KOLA,RATNAJI RAO |
| 专利号 | EP0676797A2 |
| 著作权人 | AT&T IPM CORP. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Article comprising a SiOx layer and method of making the article |
| 英文摘要 | The invention is embodied in high reliability semiconductor lasers that need not be maintained inside a hermetic enclosure. Such lasers can advantageously be used in a variety of applications, e.g., in optical fiber telecommunications, and in compact disc players. Such "non-hermetic" lasers comprise facet coatings (e.g., 401, 41) that comprise a dielectric layer (e.g., 401, 41) that has very low water saturation value. In preferred embodiments this dielectric layer is SiOx (1 Z x < 2), deposited by a molecular beam method. Deposition conditions are selected to result in a dense material that is largely free of particulates and blisters, and is substantially impermeable to moisture. Among the deposition conditions is substantially normal beam incidence, and a relatively low deposition rate. Deposition is advantageously carried out under relatively high vacuum conditions. A quantitative method of determining the water level in a SiOx film is disclosed. The invention is also embodied in articles (e.g., integrated circuits or discrete semiconductor devices) that have a low stress (absolute value less than 90 MPa, even less than 20 MPa) SiOx layer disposed on a semiconductor body. |
| 公开日期 | 1995-10-11 |
| 申请日期 | 1995-03-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43990]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | AT&T IPM CORP. |
| 推荐引用方式 GB/T 7714 | CHAND, NARESH,OSENBACH, JOHN WILLIAM,COMIZZOLI, ROBERT BENEDICT,et al. Article comprising a SiOx layer and method of making the article. EP0676797A2. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。