Manufacture of semiconductor light emitting element
文献类型：专利
| 作者 | DOUMEN MEGUMI |
| 专利号 | JP1991125491A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor light emitting element |
| 英文摘要 | PURPOSE:To obtain high light emitting efficiency and horizontal mode control by including a process to epitaxially grow a GaInP layer only on the (100) surface of an Al GaInP and a process making to epitaxially grow a second Al GaInP layer on a GaInP layer and on a first Al GaInP layer where no GaInP layer is epitaxially grown. CONSTITUTION:A(111) surface is exposed on the side wall 12 of a stripe 11, and the (100) is exposed on the upper surface 13 respectively. Further, (100) surface is exposed on a flat part 14 on both sides of the stripe 1 A lower part clad layer 2 consisting of p-type Al GaInP is formed on a GaAs substrate An active layer 3 and a GaInP layer 31 are formed utilizing selective epitaxial growing property to (100) surface of the Al GaInP layer clad layer 2, and they are not grown on the (111) surface of a side wall 12. A striped GaInP active layer 3 is buried in the Al GaInP clad layer 2 and 4. |
| 公开日期 | 1991-05-28 |
| 申请日期 | 1989-10-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43995]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | DOUMEN MEGUMI. Manufacture of semiconductor light emitting element. JP1991125491A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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