Method of epitaxial growth of compound semiconductor
文献类型：专利
| 作者 | KUBO MINORU; NARISAWA TADASHI |
| 专利号 | JP1992370920A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method of epitaxial growth of compound semiconductor |
| 英文摘要 | PURPOSE:To form a high quality GaAs layer which has a dislocation density low enough to be applicable to a practical device. CONSTITUTION:When a GaAs layer 8 is built up on an Si substrate by epitaxial growth, a strained superlattice layer 7 mode of SinGem [wherein (n) and (m) denote the respective numbers of molecule layer: 1<=(n) and (m)<=10] is built up at least in the boundary between the Si substrate 1 and the GaAs layer 8 or in the GaAs layer 8. The Si crystal and the Ge crystal which the strained superlattice layer 7 is composed have higher hardnesses against dislocation than a compound semiconductor composed of the GaAs layer 8. Further, the lattice constant of Ga is between those of Si and GaAs. Therefore, the creation and propagation of the strain caused by a stress produced by lattice mismatching between the Si substrate 1 and the GaAs layer 8 can be suppressed. |
| 公开日期 | 1992-12-24 |
| 申请日期 | 1991-06-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/43998]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KUBO MINORU,NARISAWA TADASHI. Method of epitaxial growth of compound semiconductor. JP1992370920A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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