Integrated optical semiconductor device
文献类型：专利
| 作者 | KURODA FUMIHIKO; KUSHIBE MITSUHIRO |
| 专利号 | JP1992134896A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated optical semiconductor device |
| 英文摘要 | PURPOSE:To inhibit a drop in absorption efficiency or the generation of noise and enhance absorption efficiency in a compact light receiving region by forming a semiconductor optical waveguide passage so that it may extend toward a light emitting plane from a light incident plane in the light receiving region. CONSTITUTION:An undoped InGaAsP layer 2 is arranged to make epitaxial growth on an InP semiconductor substrate 1 where an optical waveguide passage 13 is formed in such a manner that it may extend gradually from a light incident side in a light receiving region. Then, an undoped InP layer 22 is laminated on the substrate 1 where the optical waveguide passage 13 is buried. After it is buried, an undoped InP etch stop layer 23, an undoped InGaAs optical absorption layer 4, and an undoped InAlAs Shotkky barrier layer 5 are arranged to make epitaxial growth successively. A layer 7 is arranged to remain but the layers 4 and 5 are selectively etched so that a Shotkky electrode 6 may be formed on the layer 5 through gold deposition and a lift off process. |
| 公开日期 | 1992-05-08 |
| 申请日期 | 1990-09-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44002]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KURODA FUMIHIKO,KUSHIBE MITSUHIRO. Integrated optical semiconductor device. JP1992134896A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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