Junction-type semiconductor light-emitting element
文献类型：专利
| 作者 | INABA FUMIO; ITO HIROMASA; TANIGUCHI KOICHI |
| 专利号 | JP1989179469A |
| 著作权人 | RES DEV CORP OF JAPAN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Junction-type semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To improve efficiency in injecting currents into an active region and to allow carriers to be effectively contained in the active region by a method wherein the active region is formed into a disk extending laterally in a columnar protrusion. CONSTITUTION:A disk-geometry active region AR is built, located inside and extending across a columnar protrusion P, of an active layer including a double heterojunction constituted of a layer different in conductivity type from the columnar protrusion P and a diffusion region DR different in conductivity type from the active region formed around the columnar protrusion P. In such a design, the active region AR may be substantially reduced in dimensions, which enhances the efficiency in current injection into the active region. This further enhances light emission, realizes a high-brightness light emission, and increases modulation speeds and output. |
| 公开日期 | 1989-07-17 |
| 申请日期 | 1988-01-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44005]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RES DEV CORP OF JAPAN |
| 推荐引用方式 GB/T 7714 | INABA FUMIO,ITO HIROMASA,TANIGUCHI KOICHI. Junction-type semiconductor light-emitting element. JP1989179469A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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