Semiconductor laser and manufacture of the same
文献类型：专利
| 作者 | KOUMAE ATSUO; ASAHI HAJIME; TENMIYO JIRO; HASUMI YUJI |
| 专利号 | JP1987079686A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture of the same |
| 英文摘要 | PURPOSE:To facilitate formation of a ridge stripe structure and current constricting P-type regions and, moreover, making the ridge stripe narrow by providing the narrow stripe shape region and the P-type regions on a semi- insulating GaAs crystal substrate self-aligningly. CONSTITUTION:An Mg doped P-type Ga1-xAlxAs layer 12, an Mg doped P-type GaAs layer 13, an N-type Ga1-xAlxAs layer 14 and an N-type GaAs layer 15 are successively made to grow on a semi-insulating GaAs substrate 1 Then an Si3N4 film 26 is formed on the layer 15 and a resist layer 27 of an N-type electrode region is left on the film 26 so as to have a pattern corresponding to a stripe-shape active region 13'. The film 26 is removed by etching except the N-type electrode region by using the resist as a mask. Further, the layer 15 and the layer 14 are etched to the intermediate depth of the layer 14 to obtain a ridge stripe structure formed over the layers 27, 26, 15 and 14. Then Be ions are implanted by using the film 27 and the film 26 as a mask to form P-type regions 16. |
| 公开日期 | 1987-04-13 |
| 申请日期 | 1985-10-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44010]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | KOUMAE ATSUO,ASAHI HAJIME,TENMIYO JIRO,et al. Semiconductor laser and manufacture of the same. JP1987079686A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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