Junction type semiconductor light emitting element
文献类型：专利
| 作者 | TANIGUCHI KOICHI; ITO AKIRA; HATTORI KUNIHIRO |
| 专利号 | JP1989179388A |
| 著作权人 | RES DEV CORP OF JAPAN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Junction type semiconductor light emitting element |
| 英文摘要 | PURPOSE:To massproduce elements at a low cost and make the modification of active layer's forms relatively simple, by forming a groove in such a way that a diffraction grating is exposed at an insulation layer on the diffraction grating that is formed on a semiconductor substrate and forming the semiconductor layer comprising the active layer on the insulation layer so that its semiconductor layer may cover the above groove. CONSTITUTION:An n-type InP clad layer 1 performs an epitaxial growth on an n-type InP substrate B and a diffraction grating 2 is formed on a clad layer After that, an insulation layer 3 is provided and a slender groove 7 which causes the clad layer 1 extending from one end of the substrate to its other end to be exposed is formed at the insulation layer 3. Subsequently, an InPGaAsP active layer 4 and a p-type InP clad layer 5 perform the epitaxial growth in order in such a way that its growth may cover the groove 7 and a semiconductor layer having a double hetero junction is formed on the insulation layer 3. An electrode E1 as an electrode material located at the p-side of the substrate is mounted at the surface of the clad layer 5 as well as the insulation layer 3 and the electrode E2 as the electrode material located at the n-side of the substrate is mounted at the lower face of the substrate layer B respectively. Finally both end faces of the semiconductor layer are cleft to obtain cleavage planes and resonators are formed by using the cleavage planes as reflecting mirrors. |
| 公开日期 | 1989-07-17 |
| 申请日期 | 1988-01-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44014]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | RES DEV CORP OF JAPAN |
| 推荐引用方式 GB/T 7714 | TANIGUCHI KOICHI,ITO AKIRA,HATTORI KUNIHIRO. Junction type semiconductor light emitting element. JP1989179388A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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