Optical and electronic integrated circuit and manufacture thereof
文献类型：专利
| 作者 | HASUMI YUJI; TENMIYO JIRO; ASAHI HAJIME; YUKIMAE ATSUO |
| 专利号 | JP1987274789A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical and electronic integrated circuit and manufacture thereof |
| 英文摘要 | PURPOSE:To enable manufacture of an optical and electronic integrated circuit suitable for a high speed, high reliability and high integration by a method wherein a hetero junction bipolar transistor (HBT) element is manufactured according to the ion implantation method to an epitaxial substrate for double hetero laser. CONSTITUTION:An n type GaAs layer 2 to be used as the emitter electrode of an HBT is formed on a semiinsulating GaAs substrate A first semiconductor layer 3 consisting of n-type wide gap AlxGa1-xAs (0y) is the part to be used as the active layer of the LD, and at the same time, to be used also as the base layer of the HBT. A third semiconductor layer 5 consisting of p-type wide gap AlxGa1-xAs is the part to be used as the clad layer of the LD and to be used as the collector layer of the HBT. A p type GaAs cap layer 6 is provided for realization of low resistance ohmic contact, and an insulating region 7 for interelement isolation, a p type region 8 formed in high carrier concentration and a region 9 inverted to an n-type are provided. |
| 公开日期 | 1987-11-28 |
| 申请日期 | 1986-05-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44019]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | HASUMI YUJI,TENMIYO JIRO,ASAHI HAJIME,et al. Optical and electronic integrated circuit and manufacture thereof. JP1987274789A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。