中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Optical semiconductor device and optical semiconductor in tegrated circuit

文献类型:专利

作者NUNOYA, NOBUHIRO; SHIBATA, YASUO; FUJIWARA, NAOKI; KIKUCHI, NOBUHIRO; TOMORI, YUICHI
专利号US20060050752A1
著作权人NIPPON TELEGRAPH AND TELEPHONE CORPORATION
国家美国
文献子类发明申请
其他题名Optical semiconductor device and optical semiconductor in tegrated circuit
英文摘要An optical semiconductor device and optical semiconductor integrated circuit are provided by combining, on a semiconductor substrate, materials having different refractive indices and different temperature dependence of the refractive indices. In particular, it becomes possible to control the temperature dependence of the oscillation wavelength with a propagating region having a material and/or structure whose temperature dependence of the refractive index is different from that of a gain region of the semiconductor laser. In addition, they can be configured to have a plurality of interfaces formed along the waveguide direction of the optical waveguide so that the light reflected off the first interface is weakened by the light reflected from the remaining interfaces. Also, they can be configured with the interfaces inclined to the propagating direction so that the waveguide loss due to the reflection and refraction between the optical waveguides whose refractive indices differ from each other can be reduced.
公开日期2006-03-09
申请日期2004-03-30
状态授权
源URL[http://ir.opt.ac.cn/handle/181661/44021]  
专题半导体激光器专利数据库
作者单位NIPPON TELEGRAPH AND TELEPHONE CORPORATION
推荐引用方式
GB/T 7714
NUNOYA, NOBUHIRO,SHIBATA, YASUO,FUJIWARA, NAOKI,et al. Optical semiconductor device and optical semiconductor in tegrated circuit. US20060050752A1.

入库方式: OAI收割

来源:西安光学精密机械研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。