Method for liquid phase epitaxial growth
文献类型：专利
| 作者 | KISHI YUTAKA |
| 专利号 | JP1983212130A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Method for liquid phase epitaxial growth |
| 英文摘要 | PURPOSE:To obtain the liquid phase epitaxial growing method with which the meltback generating on the circumferential part of a substrate can be prevented by a method wherein the solution to be used for epitaxial growth if contacted with the surface of the sample to be processed, and an InGaAsP layer is formed on the upper surface of the sample to be processed and on the side face of the InGaAs layer. CONSTITUTION:The InP substrate 1 in a sulfur-doped plane direction is placed on the prescribed position of a slide type liquid phase growing boat consisting of ordinary carbon, and thesolutionfor meltbak of the InP substrate, a buffer layer growing solution, an InGaAs layer growing solution, and an InGaAsP layer growing solution are successively conacted with the surface of the substrate 1, thereby enabling to form in lamination a buffer layer 2 consisting of InP, an I n0.53 Ga0.47As layer 3, and an InCaAsP layer. The edge growth 6 formed part having aproximately 2 millimeters in width located on the circumference of the sample to be processed is removed using a cleavage method, and the surface layer of the cleavage surface is removed by performing an etching for 5-6sec or thereabout using the mixed solutionof sulfuric scid, hydrogen peroxide and wate. The sample 5 processed as above is placed again at the prescribed position on the liquid phase growing boat, the InGaAsP layer 7 for antimeltback is formed by making the above-mentioned InGaAsP layer growing solution to come in contact with the surface of the sample 5, and then an InP layer 8 of approximately 2 mum in thickness is formed by contacting with an InP growing solution. |
| 公开日期 | 1983-12-09 |
| 申请日期 | 1982-06-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44026]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | KISHI YUTAKA. Method for liquid phase epitaxial growth. JP1983212130A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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