Coupled quantum well strained superlattice structure and optically bistable semiconductor laser incorporating the same
文献类型：专利
| 作者 | HASENBERG, THOMAS C.; GIGNAC, WILLIAM J. |
| 专利号 | EP0428913A3 |
| 著作权人 | HUGHES AIRCRAFT COMPANY |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Coupled quantum well strained superlattice structure and optically bistable semiconductor laser incorporating the same |
| 英文摘要 | A short-period, strained superlattice structure (10) includes two coupled quantum well layers (12,14) separated by a barrier layer (16). The quantum well layers are preferably formed of indium arsenide and are 2 monolayers thick. The barrier layer is preferably formed of gallium arsenide and is 2 to 10 monolayers thick. The quantum well layers have a lattice parameter or constant which is sufficiently different from that of the barrier layer that a permanent strain exists in the structure. The layers are sufficiently thin that they remain in an unrelaxed state, thereby precluding the formation of misfit dislocations. As an alternative, the superlattice structure may include more than two quantum well layers, each adjacent two of which are separated by a barrier layer. As another alternative, a plurality of structures, each including two quantum well layers separated by a barrier layer may be provided, with each structure separated by a gallium arsenide buffer layer on the order of 170 to 204 angstroms thick. Where incorporated into a semiconductor diode laser as an active region, the strained superlattice structure is capable of exhibiting optical bistability. |
| 公开日期 | 1991-11-21 |
| 申请日期 | 1990-10-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44027]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HUGHES AIRCRAFT COMPANY |
| 推荐引用方式 GB/T 7714 | HASENBERG, THOMAS C.,GIGNAC, WILLIAM J.. Coupled quantum well strained superlattice structure and optically bistable semiconductor laser incorporating the same. EP0428913A3. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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