Double hetero-structure semiconductor laser
文献类型：专利
| 作者 | KOBAYASHI ATSUYUKI |
| 专利号 | JP1986137386A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Double hetero-structure semiconductor laser |
| 英文摘要 | PURPOSE:To obtain excellent oscillating characteristic by forming a double hetero-structure that is contacted at the upper and lower surfaces with a substance having small refractive index and has an active region contacted at both sides with a space, thereby effectively enclosing a light to an active region. CONSTITUTION:A reverse mesa type groove 22 is formed in parallel by photolighography on an InP substrate 21, and an InGaAsP layer 23 is formed by an MBE method. The layer 23 is disconnected and has a grown portion 29. A P type In layer 24, an N type InP layer 25 and a P type InP layer 26 are grown. A P type In layer 27 is grown by an LPE. Zn is diffused selectively from the surface of the groove 22 by photolithography to from the layer 25 to P type to form a P type stripe 28. Electrodes 8, 9 are formed on both sides of a wafer, and a semiconductor laser is obtained by cleavage. Since an active region 2 is contacted at the upper and lower sides with P type clad 2 and N type clad 3 having small refractive indexes and both sides are contacted with the space 6, a light enclosing effect is effectively performed. |
| 公开日期 | 1986-06-25 |
| 申请日期 | 1984-12-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44029]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KOBAYASHI ATSUYUKI. Double hetero-structure semiconductor laser. JP1986137386A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。