Quantum well semiconductor laser element
文献类型：专利
| 作者 | MATSUMOTO SHIGETO; KASUKAWA AKIHIKO; YUKITANI TAKESHI; OKAMOTO HIROSHI |
| 专利号 | JP1992122084A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Quantum well semiconductor laser element |
| 英文摘要 | PURPOSE:To contrive an improvement in characteristics by a method wherein the of quantum well layer is set at 1 or 2, a forbidden energy band width of a light confining layer is greater by 160meV than the forbidden energy band width of the quantum well layer, and the thickness of the quantum well layer is set at 30 to 80Angstrom . CONSTITUTION:A light confining layer 13 comprising an n-InP clad layer 12, a CaInAsP layer 13d and GaInAsP layer 13c, 13b, 13a are successively formed on an n-InP substrate 1, and an active layer comprising a single quantum well layer of only a GaInAs quantum well layer 14, a light confining layer 16 comprising GaInAsP layers 16a, 16b, 16c, 16d, lastly a p-InP clad 17 and a p-GaInAsP contact layer 18 are formed. At this time, an inner loss is reduced by setting the number of quantum well layer at 1 or 2, a far field is narrowed, and the forbidden band width of a light confining layer is greater by 160meV than the forbidden band width of the quantum well layer, whereby an increase in threshold value current density is prevented. The thickness of the quantum well layer is set in a range of 30 to 80Angstrom , whereby oscillation of the first quantum level can be achieved which is superior in temperature dependence of an oscillation wavelength and light output dependence. |
| 公开日期 | 1992-04-22 |
| 申请日期 | 1990-09-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44031]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | MATSUMOTO SHIGETO,KASUKAWA AKIHIKO,YUKITANI TAKESHI,et al. Quantum well semiconductor laser element. JP1992122084A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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