Distribution feedback type semiconductor and its manufacture method
文献类型：专利
| 作者 | KITAMURA MITSUHIRO; YAMADA HIROHITO; SASAKI YOSHIHIRO; SASAKI TATSUYA |
| 专利号 | JP1991062985A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distribution feedback type semiconductor and its manufacture method |
| 英文摘要 | PURPOSE:To obtain a high-performance distribution feedback type semiconductor laser with a high productivity and reproducibility by forming an ultra-grid buffer consisting of a semiconductor multilayer thin film between an active layer and a waveguide layer. CONSTITUTION:An Si doped n-type InGaAsP waveguide layer 3 of a light- emitting wavelength of 3mum, InP, each 20Angstrom of InGaAsP of 3mum composition, an ultra-grid buffer layer 4 consisting of five layers, indoped InGaAsP barrier layer of a wavelength of 3mum composition and a quantum well active layer 5 consisting of a non-doped InGaAs quantum well layer 4, and an Zn dope p-type InP clad layer 6 are laminated in sequence. The depth of diffraction grid after growth should be approximately 350Angstrom , the thickness of the waveguide layer 3 should be 1500Angstrom , and total thickness of the ultra-grid buffer layer 4 should be 200Angstrom . Thus, distortion of crystal generated at the waveguide layer can be effectively absorbed by the ultra-grid buffer layer and a waveguide layer can be formed by a plurality of semiconductor layers with different compositions. |
| 公开日期 | 1991-03-19 |
| 申请日期 | 1989-07-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44040]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | KITAMURA MITSUHIRO,YAMADA HIROHITO,SASAKI YOSHIHIRO,et al. Distribution feedback type semiconductor and its manufacture method. JP1991062985A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。