Vapor growing method for rare earth element added iii-v compound semiconductor
文献类型：专利
| 作者 | NAKAGOME HIROSHI; UEI KUNIHIKO; TAKAHEI KENICHIRO |
| 专利号 | JP1990020017A |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Vapor growing method for rare earth element added iii-v compound semiconductor |
| 英文摘要 | PURPOSE:To sharpen a light emitting spectrum of rare earth element ions and to use as a light emitting material by vapor growing rare earth element added III-V compound semiconductor at a temperature of a specific range when the semiconductor is epitaxially grown on a grown substrate. CONSTITUTION:A GaAs single-crystal substrate 2 is employed, and a rare earth element added III-V compound semiconductor layer 3 is formed thereon by a MOCVD method. Triethyl gallium as a material gas of group III element, arsine as material gas of group V element and trismethylcyclopentadienylerbium as material gas of rare earth elements are fed to a reaction tube. Its growing temperature is measured by a thermocouple connected to a growing temperature measuring fine tube 4. If the growing temperature is 600 deg.C, an emitting light spectrum is wide, but in case of 460 deg.C of low temperature, the spectrum becomes pure and sharp. When the temperature is set to a range of 600 to 400 deg.C, the binding of the rare earth element to the group V element can be controlled to obtain an emitting light spectrum of the same degree as those of a dielectric. |
| 公开日期 | 1990-01-23 |
| 申请日期 | 1988-07-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/44048]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | NAKAGOME HIROSHI,UEI KUNIHIKO,TAKAHEI KENICHIRO. Vapor growing method for rare earth element added iii-v compound semiconductor. JP1990020017A. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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